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 FMS2028
SP6T GaAs Multi-Band GSM Antenna Switch
FEATURES:
* * * * * * Available in die form Very low Tx Insertion loss High Tx-Rx isolation >45dB typ. at 1.8GHz High Tx-Tx isolation >30dB typ. at 1.8GHz Excellent low control voltage performance Excellent harmonic performance
Preliminary Datasheet v2.1
FUNCTIONAL SCHEMATIC:
AN T R X1 V RX 1 TX 1 V TX 1 TX 2 V TX 2 R X2 V RX 2 R X3 V RX 3 R X4 V RX 4 VM
GENERAL DESCRIPTION:
FMS2028 is a low loss, high power single pole six throw Gallium Arsenide antenna switch. The die is fabricated using the Filtronic FL05 0.5m switch process technology that offers leading edge performance optimised for switch applications. FMS2028 is designed for use in dual-, tri- and quad-band GSM handset antenna switch and RF front-end modules.
TYPICAL APPLICATIONS:
* Suitable for multi-band GSM/DCS/PCS/EDGE applications
ELECTRICAL SPECIFICATIONS:
PARAMETER
Tx Insertion Loss Rx Insertion Loss Return Loss Isolation (TX-TX) Isolation (TX-RX) Isolation (RX-RX) P0.1dB 2nd Harmonic Level 3rd Harmonic Level Switching speed
CONDITIONS
0.9 GHz 1.8 GHz 0.9 GHz 1.8 GHz
(1)
MIN
0 0 0 0 -- 26 19.5 42 37 26 20 -- -100 -100 -100 -100 -- -- 0.01 0.01
TYP
0.4 0.41 0.73 1.0 23 28.5 21 47 42 28 22 37 -80 -80 -68 -72 -- -- 12 1.3
MAX
0.55 0.6 1 1.2 -- 55 45 55 55 -- -- -- -70 -70 -65 -65 0.3 1 40 4
UNITS
dB dB dB dB dB dB dB dB dB dB dB dBm dBc dBc dBc dBc s s A A
0.5 - 2.5 GHz 0.9 GHz 1.8 GHz 0.9 GHz 1.8 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 0.9 GHz, CW 0.9 GHz, Pin = +35 dBm, CW (2) 1.8 GHz, Pin = +33 dBm, CW (2) 0.9 GHz, Pin = +35 dBm, CW (2) 1.8 GHz, Pin = +33 dBm, CW (2) 10% to 90% RF and 90% to 10% RF, Pin = 0 dBm 50% control to 90% RF and 50% control to 90% RF, Pin = 0 dBm Vctrl = 0 / 2.7 V, Pin = 35 dBm, 0.9 GHz Vctrl = 0 / 2.7 V, Pin = 0 dBm, 1.8 GHz
Control Current
Note 1: TAMBIENT = 25C, Vctrl = 0V/2.7V, ZIN = ZOUT = 50 Note 2: Measured harmonic values are dependant upon system termination impedances at the harmonic frequency
1
Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FMS2028
Preliminary Datasheet v2.1
ABSOLUTE MAXIMUM RATINGS:
PARAMETER
Max Input Power Control Voltage Operating Temp Storage Temp
BONDPADS COORDINATES:
PAD REF
A B C D E F
SYMBOL
Pin Vctrl Toper Tstor
ABSOLUTE MAXIMUM
+38dBm +6V -40C to +100C -55C to +150C
PAD NAME
Tx1 VRx1 VTx1 VRx2 VM VRx3 VTx2 VRx4 Tx2 ANT Rx1 GND Rx2 Rx3 Rx4
DESCRIPTION
PIN COORDINATES (M)
(125.9, 121.4) (100.2, 215.9) (110.4, 310.5) (90.5, 405.1) (90.5, 499.7) (90.5, 594.3) (107, 688.9) (107, 783.5) (125.9, 878.1) (424.9, 499.7) (568.2, 114.8) (747.4, 282.7) (747.4, 380.3) (747.4, 681.2) (747.4, 882.1)
TX1 RF Output Rx1 Control Voltage Tx1 Control Voltage Rx2 Control Voltage Common Receive Control Voltage Rx3 Control Voltage Tx2 Control Voltage Rx4 Control Voltage Tx2 RF Output Antenna Rx1 RF Output Ground RX2 RF Output RX3 RF Output RX4 RF Output
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device.
PAD LAYOUT:
I H G F E D C B A K J M L N O
G H I J K L M N O
Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening
DIE SIZE (m)
852 x 990
DIE THICKNESS (m)
150
MIN. BOND PAD PITCH (m)
94.6
MIN. BOND PAD OPENING (m x m )
65 x 65
TRUTH TABLE:
VM
Low Low High High High High
VRX4
Low Low Low Low Low High
VRX3
Low Low Low Low High Low
VRX2
Low Low Low High Low Low
VRX1
Low Low High Low Low Low
VTX2
Low High Low Low Low Low
VTX1
High Low Low Low Low Low
ON PATH
ANT-TX1 ANT-TX2 ANT-RX1 ANT-RX2 ANT-RX3 ANT-RX4
Note: High: 2.7V 0.2V; Low: 0V 0.2V
2
Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FMS2028
Preliminary Datasheet v2.1
TYPICAL MEASURED PERFORMANCE ON EVALUATION BOARD:
Note: Measurement Conditions VCTRL= 0V (low) & 2.7V (high), TAMBIENT = 25C unless otherwise stated
3
Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FMS2028
Preliminary Datasheet v2.1
EVALUATION BOARD COMPONENT SIDE LAYOUT:
EVALUATION BOARD SCHEMATIC:
V1 V2 V3 V4 V5 V6 V7 C2 C2 C2 C2 C2 C2 C2
C1
C1
C1
C1
C1
C1
C1
VRX1
VTX1
VRX2
VM
VRX3
VTX2
VRX4
RF1
C3
TX1
TX2
C3
RF7
FMS2028
RF2 C3
RX1 ANT
C3
RF4
GND
RX2
RX3
RX4
C3
C3
C3
BILL OF MATERIALS:
LABEL
Board RFC DCC C1 C2 C3
RF3
RF5
RF6
COMPONENT
Preferred evaluation board material is 0.25 mm thick ROGERS RT4350. All RF tracks should be 50 ohm characteristic material. SMA RF connector DC connector Capacitor, 47pF, 0402 Capacitor, 470pF, 0603 Capacitor, 100pF, 0402
4
Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FMS2028
Preliminary Datasheet v2.1
PREFERRED ASSEMBLY INSTRUCTIONS:
GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy is should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4m diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150C and a bonding force of 40g has been shown to give effective results for 25m wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections.
HANDLING PRECAUTIONS:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters, noise data and large-signal models are available on the Filtronic web site.
DISCLAIMERS:
This product is not designed for use in any space based or life sustaining/supporting equipment.
ORDERING INFORMATION:
PART NUMBER
FMS2028-000-FF FMS2028-000-WP FMS2028-000-EB
DESCRIPTION
Wafer mounted on film frame Die in Waffle-pack (Gel-pak available on request) Die mounted on evaluation board
5
Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com


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